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Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain

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4 Author(s)
Choi, Yang-Kyu ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Daewon Ha ; Tsu-Jae King ; Chenming Hu

Nanoscale ultrathin body (UTB) p-channel MOSFETs with body thickness down to 4 nm and raised source and drain (S/D) using selectively deposited Ge are demonstrated for the first time. Devices with gate length down to 30 nm show high drive current, low off current, and excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge in the ultrathin body are investigated.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 9 )