Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain

Nanoscale ultrathin body (UTB) p-channel MOSFETs with body thickness down to 4 nm and raised source and drain (S/D) using selectively deposited Ge are demonstrated for the first time. Devices with gate length down to 30 nm show high drive current, low off current, and excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge in the ultrathin body are investigated.