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Carbon-nanotube-based triode-field-emission displays using gated emitter structure

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5 Author(s)
Ito, Fuminori ; Silicon Syst. Res. Lab., NEC Corp., Kanagawa, Japan ; Tomihari, Y. ; Okada, Y. ; Konuma, Kazuo
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We fabricated a carbon-nanotube-based triode-field-emission display with a gated emitter structure made up of a gate layer, a thin insulating layer, and a carbon nanotube layer. A low threshold voltage of 20 V and a total anode current of 0.5 mA at 80 V were observed for 30/spl times/30 pixel panels. We also demonstrated highly efficient and homogeneous emission from all pixels at voltages lower than 100 V. Based on simulation of electric fields in gate holes, further improvement of the emission properties is expected by optimizing its structural parameters, such as the gate-hole diameter.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 9 )

Date of Publication:

Sept. 2001

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