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Thin inter-polyoxide films for flash memories grown at low temperature (400/spl deg/C) by oxygen radicals

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5 Author(s)
Hamada, Tatsufumi ; Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan ; Saito, Y. ; Hirayama, M. ; Aharoni, H.
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Thin polyoxide films grown at 400/spl deg/C on n/sup +/-poly-Si films, used as gate insulators in MOS capacitors, are shown to exhibit superior performance, with respect to conventional, thermally grown polyoxide films at 900/spl deg/C, i.e., they possess lower leakage currents and can sustain higher electrical fields. They are also shown to be superior to, either polyoxide films grown at 980/spl deg/C on substrates treated by chemical mechanical polishing (CMP) or polyoxide films grown by electron cyclotron resonance (ECR) nitrous oxide plasma at 400/spl deg/C. The present film growth techniques utilize oxygen radicals (O*), rather than oxygen molecules (O/sub 2/), which are used in conventional processing. The oxygen radicals are generated by microwave (2.45 GHz) excited high-density plasma of Kr/O/sub 2/ gas mixture.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 9 )