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Optimal ON-resistance versus breakdown voltage tradeoff in superjunction power devices: a novel analytical model

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2 Author(s)
Strollo, A.G.M. ; Dipartimento di Ingegneria Elettronica, Naples Univ., Italy ; Napoli, E.

A two-dimensional (2-D) analytical model for the calculation of breakdown voltage of recently proposed power super-junction (SJ) devices is presented. The model is able to correctly estimate electric field and breakdown voltage giving a deep insight in the design of SJ structures. Design criteria to minimize ON-resistance for a given breakdown voltage are discussed. Numerical 2-D simulations validate the proposed model

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 9 )