Cart (Loading....) | Create Account
Close category search window

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Brezeanu, G. ; Politech. Univ. of Bucharest, Romania ; Badila, M. ; Tudor, B. ; Millan, J.
more authors

We have fabricated Ni Schottky rectifiers on 2.7× 1016 cm-3 n-type 6H-SiC epilayer using an effective edge termination based on an oxide ramp profile around the Schottky contact. Several anneals of the Schottky contacts were experimented. In particular the diodes annealed at 900°C showed excellent reverse characteristics with a nearly ideal breakdown at about 800 V. Forward characteristics follow the thermionic emission theory with the ideality factor close to one at low biases. An accurate analytical model and complete parameter extraction of the forward characteristics of the Ni/6H-SiC Schottky barrier diodes (SBDs) for low and high-level current densities are presented. The model takes into account the high-level injection effects and the current dependence of the series resistance. Direct extraction of the SBD parameters is carried out. A very good agreement between the simulated forward curves using extracted parameters and measured data up to 500 A/cm2 is obtained

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 9 )

Date of Publication:

Sep 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.