By Topic

Physical compact modeling and analysis of velocity overshoot in extremely scaled CMOS devices and circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Lixin Ge ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA ; Fossum, J.G. ; Bin Liu

A compact physics-based velocity-overshoot model is developed, implemented in metal oxide semiconductor field-effect transistor (MOSFET) circuit models, verified based on measured current-voltage data and Monte Carlo-simulation results, and demonstrated in performance projections for 25 nm bulk-Si complementary metal-oxide-semiconductor (CMOS). The demonstration, involving predicted current-voltage characteristics and ring-oscillator propagation delays, reveals a significant benefit of velocity overshoot, or quasi-ballistic transport, in extremely scaled nMOS and even pMOS devices, although the on-state currents are well below the ballistic limits. Physical insight afforded by the model reveals why the ballistic limits are not being reached in scaled bulk-Si CMOS technologies

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 9 )