By Topic

OFF-State leakage current mechanisms in bulkSi and SOI MOSFETs and their impact on CMOS ULSIs standby current

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
A. O. Adan ; Integrated Circuits Dev. Group, Sharp Corp., Nara, Japan ; K. Higashi

In this work, an analytical model of the OFF-state leakage current in metal-oxide-semiconductor (MOS) transistors and its relation with the standby current of logic complementary MOS (CMOS) ICs is presented. The OFF leakage currents in (1) bulk MOS; (2) floating-body silicon-on-insulator (FB-SOI); and (3) body-tied SOI (BT-SOI) MOS field effect transistors (MOSFETs) are modeled based on physics mechanisms, equivalent circuits and operational block diagrams. Good correlation is obtained between the theory and experimental devices. The model clarifies and quantifies that in thin film FB-SOI, the OFF leakage current is dominated by (a) Vth at drain voltages lower than the onset of the “kink” effect Vds<Vdk , and (b) the impact ionization-induced floating-body effect for V ds>Vdk. The OFF-state leakage current model is successfully applied to the analysis and prediction of the leakage current components in logic integrated circuits (CMOS ICs)

Published in:

IEEE Transactions on Electron Devices  (Volume:48 ,  Issue: 9 )