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OFF-State leakage current mechanisms in bulkSi and SOI MOSFETs and their impact on CMOS ULSIs standby current

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2 Author(s)
Adan, A.O. ; Integrated Circuits Dev. Group, Sharp Corp., Nara, Japan ; Higashi, K.

In this work, an analytical model of the OFF-state leakage current in metal-oxide-semiconductor (MOS) transistors and its relation with the standby current of logic complementary MOS (CMOS) ICs is presented. The OFF leakage currents in (1) bulk MOS; (2) floating-body silicon-on-insulator (FB-SOI); and (3) body-tied SOI (BT-SOI) MOS field effect transistors (MOSFETs) are modeled based on physics mechanisms, equivalent circuits and operational block diagrams. Good correlation is obtained between the theory and experimental devices. The model clarifies and quantifies that in thin film FB-SOI, the OFF leakage current is dominated by (a) Vth at drain voltages lower than the onset of the “kink” effect Vds<Vdk , and (b) the impact ionization-induced floating-body effect for V ds>Vdk. The OFF-state leakage current model is successfully applied to the analysis and prediction of the leakage current components in logic integrated circuits (CMOS ICs)

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 9 )

Date of Publication:

Sep 2001

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