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Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown

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6 Author(s)
Dieci, D. ; Dipt. di Sci. dell''Ingegnena, Modena Univ., Italy ; Sozzi, G. ; Menozzi, R. ; Tediosi, E.
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This work shows experimental and simulated data of hot electron degradation of power AlGaAs/GaAs HFETs with different gate lengths and recess widths, and uses them to infer general indications on the bias and geometry dependence of the device high-field degradation, the meaningfulness of the breakdown voltage figure of merit from a reliability standpoint, and the physical phenomena taking place in the devices during the stress and leading to performance degradation. Possible formulations of a voltage-acceleration law for lifetime extrapolation are also tested

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 9 )