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RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology

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6 Author(s)
Qiang Li ; Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL., USA ; Jinlong Zhang ; Wei Li ; J. S. Yuan
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A systematic study of RF circuit performance degradation subject to oxide soft breakdown (SBD), and hot-carrier (HC) stress is presented in this paper. DC and RF characteristics before and after stress are extracted from the experimental data. The effects of SBD and HC stress on s-parameters, cutoff frequency, third-order interception point, and noise parameters are examined. The performance drifts of gain, noise figure, linearity, and input matching of the RF low-noise amplifier are demonstrated by SpectreRF simulation results based on measured device data

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IEEE Transactions on Microwave Theory and Techniques  (Volume:49 ,  Issue: 9 )