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Dielectric properties of Ba-Ti-O thin films prepared by MOCVD

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6 Author(s)
Masumoto, H. ; Inst. of Mater. Res., Tohoku Univ., Sendai, Japan ; Tohma, T. ; Goto, T. ; Smirnova
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BaTO3 films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt-coated fused silica and (100)MgO substrates. Ba(DPM)2 and Ti(O-i-C3H7 )2(DPM)2 were used as Ba and Ti sources, respectively. BaTiO3 films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO3 films increased with decreasing total pressure. BaTiO3 polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature

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Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on  (Volume:2 )

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