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The ferroelectric properties of Pb5Ge3O11 thin films made by MOCVD and RTP techniques

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3 Author(s)
Tingkai Li ; Sharp Labs. of America, Inc, Camas, WA, USA ; Hong Ying ; Sheng Teng Hsu

c-axis oriented ferroelectric Pb5Ge3O11 (PGO) thin films were prepared by metalorganic chemical vapor deposition (MOCVD) and rapid thermal process (RTP) annealing techniques. The films showed very good ferroelectric properties at 5 V: 2Pr and 2Ec values were 3.0-6.0 μC/cm2 and 90-110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1×109 switching cycles. The retention charge remained at 0.93 after a waiting time of 1500 seconds. The leakage currents of the PGO films were 2-5×10-7 A/cm 2 at 100 kV/cm and dielectric constants were 40-70. The memory window of Pt/PGO/Ir/SiO2/Si structures is about 3.8 V. The high quality MOCVD Pb5Ge3O11 films can be used for one-transistor memory applications

Published in:

Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on  (Volume:2 )

Date of Conference:

2000