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Ferroelectric properties of BaTi0.91(Hf0.5Zr 0.5)0.09O3 thin films fabricated by pulsed laser deposition method

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5 Author(s)
Kakemoto, H. ; Dept. of Electr. & Electron. Eng., Hirosaki Inst. of Technol., Aomori, Japan ; Kakimoto, K. ; Baba, A. ; Fujita, S.
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BaTi0.91(Hf0.5Zr0.5)0.09 O3 thin films on Pt/SiO2/Si(100) substrates were fabricated by pulsed laser deposition using fourth harmonic generated light (λ=266 nm) from an Nd3+:YAG laser beam. The crystallinity and stoichiometry of BaTi0.91(Hf0.5Zr0.5)0.09O 3 films were determined by x-ray diffraction, x-ray fluorescence analysis and electron probe microanalysis. The ferroelectric properties of the thin films were investigated by electrical measurements. The leakage current density increased from 10 -11 to 10-3 A/cm2 with increasing electric field up to 200 kV/cm. The dielectric constant, remanent polarization and coercive field of BaTi0.91(Hf0.5Zr0.5)0.09O 3 thin films were estimated to be 120 at 1 kHz, 8.7 μC/cm 2 and 127 kV/cm, respectively

Published in:
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on  (Volume:2 )

Date of Conference: 2000

Page(s):
603 - 606 vol. 2
Meeting Date :
21 Jul 2000-02 Aug 2000
ISSN :
1099-4734
Print ISBN:
0-7803-5940-2
INSPEC Accession Number:
7137854
Conference Location :
Honolulu, HI
Digital Object Identifier :
10.1109/ISAF.2000.942393
Product Type:
Conference Publications

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