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High-power diode lasers with small vertical beam divergence emitting at 808 nm

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6 Author(s)
Wenzel, H. ; Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany ; Bugge, F. ; Erbert, G. ; Hulsewede, R.
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A new waveguiding scheme for high-power diode lasers based on high-index quarter-wave reflecting layers inserted into the cladding layers is presented. For 808 nm lasers, a small vertical far-field angle of 18°, a low threshold current density of 280 A/cm2 and a high conversion efficiency of 50% are simultaneously obtained

Published in:

Electronics Letters  (Volume:37 ,  Issue: 16 )