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Low temperature MOCVD of BST thin film for high density DRAMs

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5 Author(s)
Cho, H.-J. ; Memory R&D Div., Hyundai Electronics Industries Co. Ltd, Kyoungki, South Korea ; Park, J.B. ; Yu, Y.S. ; Roh, J.S.
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The deposition characteristics of BST thin films by liquid source MOCVD at 410°C on 8-inch diameter Pt/SiO2/Si substrate were investigated using O2/N2O/NH3 mixture as oxidants. Using N2O gas only as an oxidant around 410°C is not adequate because of high C content in deposited BST films. The introduction of NH3 with O2 is highly effective on raising deposition rate, Ti/(Ba+Sr+Ti), and within wafer uniformity of Ti. The 2-step anneal process consisting of high temperature RTA in low pressure before top electrode deposition and then furnace anneal after top Pt patterning in N2 atmosphere is effective on the reduction of Tox (equivalent oxide thickness) and leakage current of BST films with minimizing thermal budget of post anneal process. The RTA at 700°C of 300-Å-thick BST films annealed at 500°C reduces Tox from 12.3 to 7.0 Å

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Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on  (Volume:1 )

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