By Topic

Application of focused ion beam system as a defect localization and root cause analysis tool

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
C. C. Ooi ; Intel Technol. Sdn. Bhd., Penang, Malaysia ; K. H. Siek ; K. S. Sim

The focused ion beam system has been widely used as a critical failure analysis tool as microprocessor technology advances at a ramping speed. It has become an essential step in failure analysis to reveal physical defects after electrical fault isolation. In the highly competitive and challenging environment prevalent at present, failure analysis throughput time is of utmost important. Therefore, a quick, efficient and reliable physical failure analysis technique is needed. This paper discusses the applications of FIB as a defect localization and root cause determination tool through the passive charge contrast technique and pattern FIB analysis

Published in:

Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the

Date of Conference: