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Electrothermal-chemical synthesis of nanocrystalline aluminum nitride using a metal vapor pulsed plasma jet

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2 Author(s)
Jong-Uk Kim ; Center for Adv. Plasma Surface Technol., Sungkyunkwan Univ., Suwon, South Korea ; Yeonkyu Ko

A relatively new process, electrothermal-chemical (ETC) synthesis, is proposed and tested for synthesizing nanocrystalline aluminum nitride (AlN) and aluminum powders. The ETC synthesis employed a plasma gun especially adapted for material synthesis. The plasma gun is powered by high magnitude current pulse (100 kA flowing for 1.2 ms) and produces pulsed, high-velocity metal vapor plasma jets. The pulsed plasma jet is directed into a reaction chamber which is filled with room temperature atmospheric pressure nitrogen (N2) or helium (He) gas reacting with the metal vapor plasma jet. Transmission electron microscopy and X-ray diffraction have been applied to characterize the synthesized materials and confirmed that the material contained nanocrystalline aluminum (Al) and AlN whose particle size ranging 30-120 nm

Published in:

Plasma Science, IEEE Transactions on  (Volume:29 ,  Issue: 4 )

Date of Publication:

Aug 2001

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