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A large dynamic range radiation-tolerant analog memory in a quarter-micron CMOS technology

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3 Author(s)
Anelli, G. ; Exp. Phys. Div., CERN, Geneva, Switzerland ; Anghinolfi, F. ; Rivetti, A.

An analog memory prototype containing 8*128 cells has been designed in a commercial quarter-micron CMOS process. The aim of this work is to investigate the possibility of designing large dynamic range mixed-mode switched capacitor circuits for high-energy physics (HEP) applications in deep submicron CMOS technologies. Special layout techniques have been used to make the circuit radiation tolerant. The memory cells employ gate-oxide capacitors for storage, permitting a very high density. A voltage write-voltage read architecture has been chosen to minimize the sensitivity to absolute capacitor values. The measured input voltage range is 2.3 V (the power supply voltage VDD is equal to 2.5 V), with a linearity of almost 8 bits over 2 V. The dynamic range is more than 11 bits. The pedestal variation is ±0.5 mV peak-to-peak. The noise measured, which is dominated by the noise of the measurement setup, is around 0.8 mV rms. The characteristics of the memory have been measured before irradiation and after 100 kGy (SiO2), and they do not degrade after irradiation

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Nuclear Science, IEEE Transactions on  (Volume:48 ,  Issue: 3 )