Detectors for high-resolution gamma-ray imaging based on a single CsI(Tl) scintillator coupled to an array of silicon drift detectors

Silicon drift detectors (SDDs) coupled to scintillators have been recently employed successfully in gamma-ray detection. The low value of output capacitance of an SDD allows to reach a lower electronics noise with respect to a conventional silicon photodiode. Detectors based on array of SDDs are of particular interest for gamma-ray imaging. A first prototype conceived for high-resolution imaging is based on a monolithic array of small SDDs (5 mm/sup 2/ each unit) with on-chip junction field-effect transistor (JFET). The first results obtained with a seven-elements array are here reported. For the realization of gamma detectors of larger active areas based on assembled units; SDDs of 30 mm/sup 2/ of area with external JFET have been produced. We present the experimental results obtained in the characterization of a single CsI(Tl)-SDD unit.