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Microwave transformers, inductors and transmission lines implemented in an Si/SiGe HBT process

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8 Author(s)
Laney, D.C. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Larson, L.E. ; Chan, P. ; Malinowski, J.
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Experimental results are presented on microwave inductors, transformers, and transmission lines fabricated in an Si/SiGe heterojunction-bipolar-transistor process with standard metallization and a thick polyimide dielectric. Microstrip transmission lines with characteristic impedances from 44 to 73 Ω, Q's from 10 to 14, and insertion losses from 0.11 to 0.16 dB/mm at 10 GHz are presented. Conventional planar inductors with inductances from 0.5 to 15 nH and with peak Q's up to 22 are presented. Lateral transformers with a maximum available gain of better than -5 dB and a measured coupling coefficient (k) of 0.6 at 5.5 GHz and 0.4 up to 12.5 GHz are also discussed

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:49 ,  Issue: 8 )