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Full-wave modeling of linear FETs for millimeter waves

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2 Author(s)
M. Farina ; Dipartimento di Elettronica e Autom., Ancona Univ., Italy ; T. Rozzi

Current monolithic-microwave integrated-circuit design, involving frequencies far in the millimeter and sub-millimeter ranges, is faced with the problem of the distributed nature of the devices. In this paper, we introduce a full-wave approach to the modeling of FETs under the small-signal hypothesis. The method is applied to MESFETs and pseudomorphic high electron-mobility transistors of different topologies and validated by comparison with available experimental data

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:49 ,  Issue: 8 )