By Topic

Etch profile control of high-aspect ratio deep submicrometer α-Si gate etch

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hyun-Mog Park ; Components Res., Intel Corp., Hillsboro, OR, USA ; Grimard, Dennis S. ; Grizzle, J.W. ; Terry, Fred L.

The well-acknowledged etch profile drift problem in chip production was investigated with a more accurate meads of measuring actual etch thickness to monitor and correct this drift. Using a high-aspect ratio, 0.1-μm α-Si gate structure, the investigation was specifically focused on the control of transition timing in the critical interval from main etch (ME) to over etch (OE). This required reliable endpoint detection of α-Si which was achieved through the development of a method employing a Kalman-Bucy filter with a real-time spectroscopic ellipsometer (RTSE). The robustness of our endpoint detection technique was tested and demonstrated under the actual physical and chemical disturbance environments of the etching process. Application of this endpoint detection technique to the etch of a 0.1-μm patterned α-Si gate also achieved a significant improvement on the etch profile repeatability

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:14 ,  Issue: 3 )