By Topic

Deep level studies in GRIN-SCH-SQW GaAs/AlGaAs laser diode structures grown by MBE

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
M. Kaniewska ; Inst. of Electron Technol., Warsaw, Poland ; K. Klima ; A. Barcz

Deep level transient spectroscopy, photoluminescence spectroscopy, as well as secondary ion mass spectrometry have been used to characterise graded refractive index separate confinement heterostructure single quantum well GaAs/AlGaAs laser diodes grown by molecular beam epitaxy (MBE). An electron trap at Ec-(0.51-0.79 eV) was found in AlxGa1-xAs with x=0-0.3. It can be identified as the wed-known photoluminescence killer related to the intrinsic point defect-oxygen complex. We conclude that the trap is one of the limiting factors in performance of non-optimum MBE lasers,

Published in:

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Date of Conference: