Deep level studies in GRIN-SCH-SQW GaAs/AlGaAs laser diode structures grown by MBE

Deep level transient spectroscopy, photoluminescence spectroscopy, as well as secondary ion mass spectrometry have been used to characterise graded refractive index separate confinement heterostructure single quantum well GaAs/AlGaAs laser diodes grown by molecular beam epitaxy (MBE). An electron trap at E/sub c/-(0.51-0.79 eV) was found in Al/sub x/Ga/sub 1-x/As with x=0-0.3. It can be identified as the wed-known photoluminescence killer related to the intrinsic point defect-oxygen complex. We conclude that the trap is one of the limiting factors in performance of non-optimum MBE lasers,.