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Deep level studies in GRIN-SCH-SQW GaAs/AlGaAs laser diode structures grown by MBE

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3 Author(s)
Kaniewska, M. ; Inst. of Electron Technol., Warsaw, Poland ; Klima, K. ; Barcz, A.

Deep level transient spectroscopy, photoluminescence spectroscopy, as well as secondary ion mass spectrometry have been used to characterise graded refractive index separate confinement heterostructure single quantum well GaAs/AlGaAs laser diodes grown by molecular beam epitaxy (MBE). An electron trap at Ec-(0.51-0.79 eV) was found in AlxGa1-xAs with x=0-0.3. It can be identified as the wed-known photoluminescence killer related to the intrinsic point defect-oxygen complex. We conclude that the trap is one of the limiting factors in performance of non-optimum MBE lasers,

Published in:

Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

Date of Conference:

2000