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Control of non-stoichiometry of low-temperature-grown III-V semiconductors using in situ reflectance difference spectroscopy

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5 Author(s)
Herfort, J. ; Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany ; Apostolopoulos, G. ; Ulrici, W. ; Daweritz, L.
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We present results of in situ reflectance difference (RD) spectroscopy investigations of AlxGa1-xAs grown by molecular beam epitaxy at low temperatures. The linear electro-optic resonances appearing in the RD spectra are utilized to in situ control the nonstoichiometry of LT-AlxGa1-xAs. The results are compared to those obtained for LT-GaAs

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Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

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