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Electron irradiation induced defects in n-GaN

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6 Author(s)
Goodman, S.A. ; Dept. of Phys., Pretoria Univ., South Africa ; Auret, F.D. ; Legodi, M.J. ; Myburg, G.
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Irradiation by high energy gamma rays or electrons is particularly effective in introducing point defects-the simplest of all defects, it provides a convenient tool for producing native defects due to elastic displacement of host atoms. We have used deep level transient spectroscopy (DLTS) to investigate the electron trap defects introduced in n-GaN grown using the epitaxial lateral overgrowth technique during high-energy electron irradiation from a 90Sr radionuclide source. The results indicate that the major electron irradiation induced defect labelled ER3 is not a single defect level but is made up of at least three defect levels. Apart from these shallower defects a set of at least four defects centered about 0.90±0.15 eV are observed

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Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

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