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Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum well structures

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6 Author(s)
Godlewski, M. ; Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland ; Goldys, E.M. ; Phillips, M.R. ; Ivanov, V.Yu.
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We studied high quality quasihomoepitaxial AlGaN/GaN quantum well (QW) heterostructures with high internal electric fields which lead to significant red shifts of exciton emission in wider QWs and an unusually long decay kinetics. The strong electric fields in the structures cause a significant change in the electron penetration range. The fields can be screened under intense electron beam excitation. We propose that electric field fluctuations are the reason for the observed in-plane variation of the CL intensity

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Semiconducting and Insulating Materials Conference, 2000. SIMC-XI. International

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