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High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE

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6 Author(s)
Chen, Y.K. ; AT&T Bell Lab., Murray Hill, NJ, USA ; Wu, M.C. ; Hobson, W.S. ; Pearton, S.J.
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High-power lattice-strained AlGaAs/InGaAs graded index separate-confinement heterostructure (GRINSCH) quantum-well lasers emitting at a 980-nm wavelength have been grown by organometallic vapor phase epitaxy (OMVPE) and fabricated with a self-aligned ridge-waveguide structure. Using a 3- mu m-wide and 750- mu m-long AR-HR coated laser, 30 mV of optical power was coupled into optical fibers with 28.6% efficiency. A dominating single-lobe far-field radiation pattern was obtained from a wedge-shaped ridge-waveguide laser for output power as high as 240 mW with a maximum output power of 310 mW.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:3 ,  Issue: 5 )

Date of Publication:

May 1991

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