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High-speed modulation of InGaAs-GaAs strained-layer multiple-quantum-well lasers fabricated by chemically assisted ion-beam etching

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4 Author(s)
Lester, L.F. ; Cornell Univ., Ithaca, NY, USA ; Schaff, W.J. ; Offsey, S.D. ; Eastman, L.F.

Graded-index separate-confinement heterostructure (GRINSCH) strained-layer lasers with five In/sub 0.3/Ga/sub 0.7/As quantum wells have been fabricated with cavity lengths from 50 to 400 mu m using chemically assisted ion-beam etching (CAIBE) to form the laser mirrors. The dry-etching process is thermally assisted, which gives a reproducible etching rate. A minimum threshold-current value is observed at a cavity length of 50 mu m, showing that the multiquantum-well design is optimum for short-cavity lasers. A relaxation oscillation frequency of 10 GHz and a -3 dB bandwidth of 15 GHz have been measured on a 200*10 mu m mesa-structure device.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:3 ,  Issue: 5 )

Date of Publication:

May 1991

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