By Topic

High-performance thin-film transistor fabricated on poly-Si films prepared by metal imprint technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Makihira, K. ; Center for Microelectron. Syst., Kyushu Inst. of Technol., Fukuoka, Japan ; Yoshii, M. ; Asano, T.

One promising approach for fabricating high-performance poly-Si TFTs is to place entire channel within a single grain of poly-Si films. To realize these devices, large grains must be formed at controlled positions. In solid phase crystallization (SPC) of amorphous Si, there have been proposed methods such as ion implantation and metal imprint technology to induce nucleation at desired sites. In this work, we demonstrate TFTs fabricated in single-grains of poly-Si films prepared by the metal- imprint technology. It is shown that the single-grain TFTs have superior performance in terms of switching behavior and uniformity in characteristics to those fabricated on conventional SPC poly-Si films.

Published in:

Device Research Conference, 2001

Date of Conference:

25-27 June 2001