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Rare-earth doped GaN electroluminescent devices for robust flat panel displays

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2 Author(s)
Heikenfeld, J. ; Nanoelectronics Lab, Cincinnati Univ., OH, USA ; Stecki, A.J.

The authors discuss the improvements required to make GaN:RE AC-ELDs overtake ZnS-based AC ELDs and possibly other flat panel devices (FPD) devices. Similar to the potential of other AC-ELD technologies, advances in GaN:RE AC-ELDs could be strongly considered for applications such as flat TVs.

Published in:

Device Research Conference, 2001

Date of Conference:

25-27 June 2001