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Testing for coupled cells in random-access memories

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3 Author(s)
Savir, J. ; IBM Data Syst. Div., Poughkeepsie, NY, USA ; McAnney, W.H. ; Vecchio, S.R.

Two test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-bit random access memory. In both strategies the data-in line is randomly driven. One of the two strategies uses random selection of both the address lines and the read/write control. The other strategy sequentially cycles through the address space with deterministic setting of the read/write control. The relative merit of the two strategies is measured by the average number of accesses per address needed to meet a standard test quality level

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Computers, IEEE Transactions on  (Volume:40 ,  Issue: 10 )