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Intersubband gain and stimulated emission in long-wavelength (λ=13 μm) intersubband In(Ga)As-GaAs quantum-dot electroluminescent devices

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7 Author(s)
S. Krishna ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; P. Bhattacharya ; J. Singh ; T. Norris
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The dynamics of injected carriers and the conditions for intersubband gain and population inversion in In(Ga)As-GaAs self-organized quantum dots have been studied. Direct femtosecond pump-probe spectroscopy as a function of temperature and excitation density confirms earlier results and shows a long (>100 ps) electron relaxation time between the excited states and ground state in the dots. Intersubband gains as high as 170 cm-1 are calculated in the dots. Far-infrared spontaneous emission centered around 13 μm is observed in edge-emitting light-emitting diodes. Stimulated emission, with a distinct threshold around 1.1 kA/cm2 in the light-current characteristics, is observed in plasmon-enhanced waveguide devices. The intersubband threshold occurs after a threshold is observed for interband lasing (~1 μm) in the same device

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IEEE Journal of Quantum Electronics  (Volume:37 ,  Issue: 8 )