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High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process

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8 Author(s)
Mitros, J.C. ; Texas Instrum. Inc., Dallas, TX, USA ; Chin-Yu Tsai ; Shichijo, H. ; Kunz, M.
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Complementary high-voltage drain extended (DE) MOS transistors were implemented into Texas Instruments' state-of-the-art production advanced analog and digital 1.5-1.8 V CMOS technology. These transistors allow for 5-V drain operating voltage using the core gate oxide and have drain breakdown voltages BVdss>10 V. Experimental results along with Suprem4 and MEDICI simulation results are presented to explain their operation. The novel p-channel transistors use an isolated compensated p-well as a drain extension. The n-channel version uses n-well as a drain extension. Experimental test results of Ids(Vds,Vgs), Igs(Vds ), and BV(L) plots demonstrate DE-MOS performance. The work was focused on performance optimization with zero process modification and hence no cost adder

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 8 )