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A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-μm CMOS devices applications

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9 Author(s)
Kong-Beng Thei ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Wen-Chau Liu ; Chuang, Hung-Ming ; Lin, Kun-Wei
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A novel double ion-implant Ti-salicide technology combining As pre-amorphization implant plus Si ion-mixing implant without the additional lithography process has been developed successfully and reported. Based on this technology, the good performances of uniform Ti-silicide formation, low and narrow distribution of sheet resistances both on n+/p+ poly-gate and source/drain diffusion layers, and lower leakage currents in the n+/p-well and p+/n-well junctions are obtained simultaneously. In addition, excellent behavior of a 0.24-μm NMOSFET and PMOSFET fabricated by this technology are also achieved

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Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 8 )