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High drive-current electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage

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2 Author(s)
Takamiya, M. ; Inst. of Ind. Sci., Tokyo Univ., Japan ; Hiramoto, T.

A novel electrically induced body dynamic threshold metal oxide semiconductor (EIB-DTMOS) is proposed where the body is electrically induced by substrate bias and its high performance is demonstrated by experiments and simulations. EIB-DTMOS achieves a large body effect and a low Vth at the same time. The upper limit of the supply voltage of the EIB-DTMOS is higher than that of a conventional DTMOS, because the forward biased p-n junction leakage current of the EIB-DTMOS is lower. Among several DTMOSs, the accumulation mode EIB-DTMOS shows the highest drive-current at fixed off-current due to a large Vth Shift (or large back gate capacitance) and a suppressed short channel effect

Published in:

Electron Devices, IEEE Transactions on  (Volume:48 ,  Issue: 8 )

Date of Publication:

Aug 2001

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