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Poly-Si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping

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4 Author(s)
Cheon-Hong Kim ; Sch. of Electr. Eng., Seoul Nat. Univ., South Korea ; Sang-Hoon Jung ; Juhn-Suk Yoo ; Min-Kuo Han

A new poly-Si TFT has been fabricated by employing laser-induced in-situ fluorine passivation and a laser-doping method. With only one excimer laser annealing, we have successfully fabricated the device using one step to crystallize, passivate and dope simultaneously. Although no additional plasma post-passivation was performed, the on-state and the off-state leakage properties of TFTs with fluorine passivation were improved compared with those without fluorine passivation. The device with in-situ fluorine passivation has the maximum transconductance of 13.3 μA/V for a C2F/sub 6/ flow rate of 100 sccm, whilst that for a device without fluorine passivation is 8.4 μA/V. The device reliability under electrical stress was remarkably improved in the in-situ fluorine-passivated devices due to the fluorine passivation of trap states in the poly-Si channel and at the SiO2/poly-Si interface.

Published in:

Electron Device Letters, IEEE  (Volume:22 ,  Issue: 8 )