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RESURF AlGaN/GaN HEMT for high voltage power switching

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3 Author(s)
S. Karmalkar ; Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India ; Jianyu Deng ; M. S. Shur

A novel HEMT configuration based on the RESURF technique is proposed for very high voltage power switching applications. It employs a p-n junction below the 2-DEG channel and two field plates, one extending from the gate and the other from the drain, to distribute the electric field over the gate to drain separation. 2-D simulations indicate a breakdown voltage >1 KV at on-resistance of /spl sim/1 m/spl Omega//spl middot/cm/sup 2/ (neglecting contact resistances) for the device.

Published in:

IEEE Electron Device Letters  (Volume:22 ,  Issue: 8 )