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Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz

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3 Author(s)
G. S. Kinsey ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; J. C. Campbell ; A. G. Dentai

An In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode with a record gain-bandwidth product of over 320 GHz has been demonstrated. A bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 μm.

Published in:

IEEE Photonics Technology Letters  (Volume:13 ,  Issue: 8 )