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Optical switching operation due to field induced refractive-index variation in 1.3 μm GaInAsP/InP MQW structures

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7 Author(s)
Kikugawa, T. ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; Shimomura, K. ; Ravikumar, K.G. ; Izumi, A.
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A GaInAsP/InP MQW intersectional switch using field-induced refractive index variation was fabricated and operated for the first time. Refractive index variation for TE polarized light was found to be 2 times larger than that for TM polarized one, and was estimated to be 0.45% in the QW layer at the bias voltage of -9 V

Published in:

Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)

Date of Conference:

11-15 Sep 1988