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A nonlinear capacitance cancellation technique and its application to a CMOS class AB power amplifier

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3 Author(s)
Chengzhou Wang ; Center for Wireless Commun., California Univ., San Diego, La Jolla, CA, USA ; Larson, L.E. ; Asbeck, P.M.

A nonlinear cancellation technique is developed specifically for MOS class AB power amplifiers. This technique utilizes a PMOS transistor at the amplifier input to cancel the variation of the input capacitance, thus improving the overall amplifier linearity. A monolithic CMOS RF power amplifier with this technique is designed and fabricated in a standard 0.6 /spl mu/m CMOS technology. The prototype single-stage amplifier has a measured drain efficiency of 40% and a power gain of 7 dB at 1.9 GHz. Linearity measurements show that the new amplifier has over 10 dB of IM/sub 3/ improvement and 6 dB of ACPR improvement compared with the traditional NMOS class AB power amplifier.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE

Date of Conference:

20-22 May 2001

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