Referenced Items are not available for this document.
The hot-carrier (HC) reliability of low-standby-power 0.1 /spl mu/m n-MOSFETs is investigated, and design guidelines for channel and halo profiles are described. The heavy channel-doping needed to obtain high V/sub th/ enhances HC-injection efficiency, and heavy halo-doping dramatically reduces the lifetime when using substrate-bias (V/sub bb/). Shallow-channel and tilted-halo doping is optimal to keep the HC-generation site away from the SiO/sub 2/-Si interface and to minimize the vertical electric field that is responsible for secondary impact ionization.
Published in:
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Date of Conference: 12-14 June 2001
- Page(s):
- 119 - 120
- Meeting Date :
- 12 Jun 2001-14 Jun 2001
- Print ISBN:
- 4-89114-012-7
- INSPEC Accession Number:
- 7074782
- Conference Location :
- Kyoto, Japan
- Digital Object Identifier :
- 10.1109/VLSIT.2001.934978
- Product Type:
- Conference Publications
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