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N- and p-MOSFETs have been fabricated in strained Si on SiGe on insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer techniques enabled the fabrication of the high Ge content SiGe-on-insulator (SGOI) substrates. Mobility enhancement of 46% for electrons and 60-80% for holes (for 20%-25% Ge content) has been demonstrated in SSOI MOSFETs. This could lead to next generation device performance enhancement.
Date of Conference: 12-14 June 2001