Referenced Items are not available for this document.
N- and p-MOSFETs have been fabricated in strained Si on SiGe on insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer techniques enabled the fabrication of the high Ge content SiGe-on-insulator (SGOI) substrates. Mobility enhancement of 46% for electrons and 60-80% for holes (for 20%-25% Ge content) has been demonstrated in SSOI MOSFETs. This could lead to next generation device performance enhancement.
Published in:
VLSI Technology, 2001. Digest of Technical Papers. 2001 Symposium on
Date of Conference: 12-14 June 2001
- Page(s):
- 57 - 58
- Meeting Date :
- 12 Jun 2001-14 Jun 2001
- Print ISBN:
- 4-89114-012-7
- INSPEC Accession Number:
- 7081259
- Conference Location :
- Kyoto, Japan
- Digital Object Identifier :
- 10.1109/VLSIT.2001.934945
- Product Type:
- Conference Publications
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