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A 700 V lateral power MOSFET with narrow gap double metal field plates realizing low on-resistance and long-term stability of performance

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6 Author(s)
Fujishima, N. ; Devices Technol. Lab., Fuji Electr. Corp., Nagano, Japan ; Saito, M. ; Kitamura, A. ; Urano, Y.
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A 700 V lateral power MOSFET with a narrow gap double metal field plate structure is proposed. The MOSFET exhibits an improved specific on-resistance of 26 Ω mm2 and achieves extremely stable performance under long-term high-voltage operation. A power IC, which integrates the developed MOSFET using 1 μm CMOS process, has successfully been applied to AC to DC converters in portable appliances

Published in:

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

Date of Conference:

2001