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A high-efficiency 5-GHz-band SOI power MOSFET having a self-aligned drain offset structure

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3 Author(s)
Matsumoto, S. ; NTt Telecommun. Energy Labs., Kanagawa, Japan ; Hiraoka, Y. ; Sakai, T.

A highly efficient RF thin-film SOI power MOSFET having a self-aligned offset gate structure is proposed. It was fabricated using a self-aligned offset gate structure based on an LDD structure to reduce the on-resistance and thus increase the power-added efficiency. The target breakdown voltage was 10 V, and the fabricated device has a breakdown voltage of 14.3 V. The RF performances of the proposed power MOSFET are the acceptable for both the 2 and 5 GHz-bands. The linear amplification characteristics of the SOI power MOSFET are almost the same as those of compound semiconductor devices

Published in:

Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on

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