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High quality factor silicon-integrated spiral inductors achieved by using thick top metal with different passivation schemes

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8 Author(s)
Shao-Fu Chu ; Chartered Semicond. Manuf. Ltd., Singapore ; Chew, K.W. ; Loh, W.B. ; Wang, Y.M.
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A novel approach combining 2 μm thick top metal, stacked design and different passivation schemes has been adopted to realize high quality factor (Q) inductors fabricated using a conventional 0.25 μm 5-level metal CMOS technology. Q-factor enhancement of greater than 50% at 2.45 GHz has been achieved. It has been found that the passivation scheme utilizing 17 kÅ of high density plasma (HDP) oxide is most effective in boosting the Q-factor. The above highlighted techniques can be easily implemented in any standard CMOS technology without additional increase in cost to the end-users

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VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on

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