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This paper presents the design of a 1.5 V CMOS fully-differential inductorless RF bandpass amplifier using a 0.35 μm n-well CMOS technology. The bandpass amplifier employs a p-channel input cascode transconductor and the newly proposed low-voltage fully-differential active inductor as an active tuned load. HSPICE simulation of the bandpass amplifier operating at a centre frequency of 1 GHz and a quality factor of 50 illustrates that a voltage gain of 50 dB and a noise figure of 4.2 dB can be achieved with a power dissipation of 46 mW from a single 1.5 V power supply voltage
Published in:
VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on
Date of Conference: 2001
- Page(s):
- 125 - 128
- Meeting Date :
- 18 Apr 2001-20 Apr 2001
- Print ISBN:
- 0-7803-6412-0
- INSPEC Accession Number:
- 7068843
- Conference Location :
- Hsinchu
- Digital Object Identifier :
- 10.1109/VTSA.2001.934499
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