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Low voltage CMOS fully differential active inductor and its application to RF bandpass amplifier design

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1 Author(s)
Thanachayanont, A. ; Fac. of Eng., King Mongkut''s Inst. of Technol., Bangkok, Thailand

This paper presents the design of a 1.5 V CMOS fully-differential inductorless RF bandpass amplifier using a 0.35 μm n-well CMOS technology. The bandpass amplifier employs a p-channel input cascode transconductor and the newly proposed low-voltage fully-differential active inductor as an active tuned load. HSPICE simulation of the bandpass amplifier operating at a centre frequency of 1 GHz and a quality factor of 50 illustrates that a voltage gain of 50 dB and a noise figure of 4.2 dB can be achieved with a power dissipation of 46 mW from a single 1.5 V power supply voltage

Published in:

VLSI Technology, Systems, and Applications, 2001. Proceedings of Technical Papers. 2001 International Symposium on

Date of Conference:

2001