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An X-band high-power amplifier using SiGe/Si HBT and lumped passive components

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7 Author(s)
Zhenqiang Ma ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Mohammadi, S. ; Liang-Hung Lu ; Bhattacharya, Pallab
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We report the design and fabrication of a compact microwave monolithic integrated circuit (MMIC) amplifier, which demonstrates high output power at X-Band. A single-stage power amplifier is demonstrated, with a double-mesa type SiGe/Si HBT as the active device and spiral inductors and MIM capacitors as lumped passive components. At 8.4 GHz, a linear gain of 8.7 dB, an output power at peak efficiency of 23 dBm, and a saturated output power P/sub sat/ of 25 dBm, are measured. To our knowledge, this is the first MMIC X-Band power amplifier using SiGe/Si HBTs.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:11 ,  Issue: 7 )