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Numerical study on the performance of GaAs MESFET-like oscillator

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3 Author(s)
Mohammadi, F.A. ; Dept. of Electr. & Comput. Eng., Ryerson Polytech. Univ., Toronto, Ont., Canada ; Raahemifar, K. ; Yuan, F.

The principal operation of a monolithic microwave integrated circuits (MMIC) compatible GaAs field effect controlled transferred electron oscillators has been investigated through our new high frequency device simulator by means of a two dimensional full hydrodynamic model. It is shown that the device presents a dynamic negative resistance and it is capable of generating the high frequency power in the millimeter-wave band

Published in:

Electrical and Computer Engineering, 2001. Canadian Conference on  (Volume:2 )

Date of Conference:

2001