By Topic

Numerical study on the performance of GaAs MESFET-like oscillator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Mohammadi, F.A. ; Dept. of Electr. & Comput. Eng., Ryerson Polytech. Univ., Toronto, Ont., Canada ; Raahemifar, K. ; Yuan, F.

The principal operation of a monolithic microwave integrated circuits (MMIC) compatible GaAs field effect controlled transferred electron oscillators has been investigated through our new high frequency device simulator by means of a two dimensional full hydrodynamic model. It is shown that the device presents a dynamic negative resistance and it is capable of generating the high frequency power in the millimeter-wave band

Published in:

Electrical and Computer Engineering, 2001. Canadian Conference on  (Volume:2 )

Date of Conference: