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A universal dual band LNA implementation in SiGe technology for wireless applications

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2 Author(s)
Schmidt, A. ; Infineon Technol. AG, Munich, Germany ; Catala, S.

A dual band low-noise amplifier (LNA) with matched inputs and outputs, implemented in Infineon Technologies' B7HF SiGe process, is presented. Both the single-ended inputs and outputs are matched to 50 Ω without external elements. For the low-band (800 MHz-1 GHz), the LNA has a measured gain of 17 dB and a noise figure below 1.2 dB at 900 MHz. The high-band (1.8-2 GHz) LNA achieves a gain of 15 dB and a noise figure below 1.5 dB at 1.9 GHz. Both LNAs consume 5 mA dc current with a power supply voltage range from 2.7-3.6 V

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:36 ,  Issue: 7 )

Date of Publication:

Jul 2001

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